Title :
Revision of the standard hydrodynamic transport model for SOI simulation
Author :
Gritsch, Markus ; Kosina, Hans ; Grasser, Tibor ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., Tech. Univ. of Vienna, Austria
fDate :
10/1/2002 12:00:00 AM
Abstract :
Anomalous output characteristics are observed in hydrodynamic simulations of partially depleted SOI MOSFETs. The effect that the drain current reaches a maximum and then decreases is peculiar to the hydrodynamic transport model. It is not observed in drift-diffusion simulations and its occurrence in measurements is questionable. An explanation of the cause of this effect is given and a solution is proposed by modifying the hydrodynamic transport model.
Keywords :
MOSFET; Monte Carlo methods; electron density; semiconductor device models; silicon-on-insulator; Monte-Carlo calculations; anomalous output characteristics; drain current; drift-diffusion simulations; electron concentration; hydrodynamic simulations; hydrodynamic transport model revision; numerical analysis; partially depleted SOI MOSFETs; Analytical models; Computational modeling; Current measurement; Electrons; Equations; High definition video; Hydrodynamics; MOSFETs; Ocean temperature; Spontaneous emission;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.803645
