Title :
The microthyristor could be a promising microelectronics device
Author :
Zekry, Abdelhalim ; Hafez, Ismail Mohammed ; El-Hady, M.M.
Author_Institution :
Fac. of Eng., Ain Shams Univ., Cairo, Egypt
fDate :
10/1/2002 12:00:00 AM
Abstract :
In this paper, a new microthyristor structure suitable for microelectronics applications has been introduced. A suitable technology for its implementation has been chosen. The microthyristor has been designed and its performance has been simulated. The device showed superior performance concerning the switching times and the power dissipation in addition to controllability of its S-curve. During the development of this work, we introduced some new concepts such as doping-engineered devices, thyristor turn-off by shunting its cathode junction, and power consumption reduction by realizing high resistances. The basic requirements and some conditions are put together for successful launch of the microthyristor in microelectronics.
Keywords :
SPICE; isolation technology; semiconductor device models; silicon-on-insulator; thyristors; PSPICE circuit simulator; S-curve controllability; SOI technology; bistable microelectronics device; cathode junction shunting; doping-engineered devices; high resistances; microelectronics applications; microthyristor design; microthyristor structure; performance simulation; power consumption reduction; power dissipation; switching times; thyristor turn-off; trench isolation; CMOS logic circuits; Cathodes; Controllability; Energy consumption; Logic devices; Microelectronics; Power dissipation; Silicon on insulator technology; Thyristors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.803632
