Title :
Ion implantation impurity profiles in HfO2
Author :
Suzuki, Kunihiro ; Morisaki, Yusuke
Author_Institution :
Fujitsu Labs. Ltd., Kanagawa, Japan
fDate :
10/1/2002 12:00:00 AM
Abstract :
We implanted B, As, and P ions in a 110-nm-thick layer of HfO2 and extracted the parameters of a Pearson IV function. The projected range of the ion implantation was about half of that in SiO2. Thus, when impurities were ion implanted in an Si substrate through a thin layer of HfO2 or SiO2, a smaller dose was retained in the substrate in the former than in the latter case. This effect was demonstrated with P-ion implantation.
Keywords :
arsenic; boron; doping profiles; energy loss of particles; hafnium compounds; insulating thin films; ion implantation; phosphorus; secondary ion mass spectra; 110 nm; HfO2 thin layer; HfO2:As; HfO2:B; HfO2:P; Pearson IV function parameters; SIMS profile; Si; Si substrate; dose retention; gate-insulator material; ion implantation impurity profiles; projected ion implantation range; Dielectric constant; Dielectric materials; Dielectric substrates; Etching; Hafnium oxide; Impurities; Ion implantation; MOSFETs; Performance evaluation; Production;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.803649
