• DocumentCode
    828455
  • Title

    Ion implantation impurity profiles in HfO2

  • Author

    Suzuki, Kunihiro ; Morisaki, Yusuke

  • Author_Institution
    Fujitsu Labs. Ltd., Kanagawa, Japan
  • Volume
    49
  • Issue
    10
  • fYear
    2002
  • fDate
    10/1/2002 12:00:00 AM
  • Firstpage
    1836
  • Lastpage
    1838
  • Abstract
    We implanted B, As, and P ions in a 110-nm-thick layer of HfO2 and extracted the parameters of a Pearson IV function. The projected range of the ion implantation was about half of that in SiO2. Thus, when impurities were ion implanted in an Si substrate through a thin layer of HfO2 or SiO2, a smaller dose was retained in the substrate in the former than in the latter case. This effect was demonstrated with P-ion implantation.
  • Keywords
    arsenic; boron; doping profiles; energy loss of particles; hafnium compounds; insulating thin films; ion implantation; phosphorus; secondary ion mass spectra; 110 nm; HfO2 thin layer; HfO2:As; HfO2:B; HfO2:P; Pearson IV function parameters; SIMS profile; Si; Si substrate; dose retention; gate-insulator material; ion implantation impurity profiles; projected ion implantation range; Dielectric constant; Dielectric materials; Dielectric substrates; Etching; Hafnium oxide; Impurities; Ion implantation; MOSFETs; Performance evaluation; Production;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2002.803649
  • Filename
    1036097
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=828455