Title :
Comment on "Modeling of small-signal minority-carrier transport in bipolar devices at arbitrary injection levels"
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
For original paper see N. Rinaldi, ibid., vol.45, p.1501-10 (1998). In the original paper, the most accurate existing closed-form analytical solutions to the ac minority carrier continuity equation in quasi-neutral regions of bipolar transistors were assessed by way of open-form infinite series solutions. Contrary to the conclusions drawn, the present author argues that, because the closed-form solutions cannot be derived from the open-form solutions, they cannot be viewed as less accurate approximations to the truncated open-form infinite series solutions.
Keywords :
bipolar transistors; minority carriers; semiconductor device models; series (mathematics); ac minority carrier continuity equation; arbitrary injection levels; bipolar transistors; closed-form analytical solutions; open-form infinite series solutions; quasi-neutral regions; small-signal minority-carrier transport modeling; truncated open-form infinite series solutions; Bipolar transistors; Charge carrier processes; Semiconductor device modeling; Series (mathematics);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.802138