Title :
Comments on "The early history of IBM\´s SiGe mixed signal technology
Author_Institution :
Agere Syst., Murray Hill, NJ, USA
Abstract :
For original paper see D.L. Harame and B.S. Meyerson, ibid., vol.48, p.2555-67 (2001).The accuracy of the historical account of the development of SiGe bipolar devices is corrected. In particular, the commenter wishes to clarify the work and the accomplishments of the team composed of individuals from Stanford University, Stanford, CA, and Hewlett-Packard, Palo Alto, CA.
Keywords :
Ge-Si alloys; chemical vapour deposition; heterojunction bipolar transistors; history; semiconductor materials; CVD technique; Gummel plot characteristics; IBM; SiGe; SiGe bipolar devices; SiGe mixed signal technology; historical development; CVD; Germanium alloys; Heterojunction bipolar transistors; History; Semiconductor materials; Silicon alloys;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.802669
