DocumentCode
828474
Title
Comments on "The early history of IBM\´s SiGe mixed signal technology
Author
King, C.A.
Author_Institution
Agere Syst., Murray Hill, NJ, USA
Volume
49
Issue
10
fYear
2002
Firstpage
1841
Lastpage
1842
Abstract
For original paper see D.L. Harame and B.S. Meyerson, ibid., vol.48, p.2555-67 (2001).The accuracy of the historical account of the development of SiGe bipolar devices is corrected. In particular, the commenter wishes to clarify the work and the accomplishments of the team composed of individuals from Stanford University, Stanford, CA, and Hewlett-Packard, Palo Alto, CA.
Keywords
Ge-Si alloys; chemical vapour deposition; heterojunction bipolar transistors; history; semiconductor materials; CVD technique; Gummel plot characteristics; IBM; SiGe; SiGe bipolar devices; SiGe mixed signal technology; historical development; CVD; Germanium alloys; Heterojunction bipolar transistors; History; Semiconductor materials; Silicon alloys;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2002.802669
Filename
1036099
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