Title :
Comments on "Inversion charge modeling"
Author :
Galup-Montoro, Carlos ; Schneider, Márcio C. ; Cunha, Ana I A
Abstract :
For original paper see H.K. Gummel and K. Singhal, ibid., vol.48, p.1585-93 (2001). In the original paper, an implicit relationship for the inversion charge density in the channel of MOS transistors is presented. As an application, the deduction of a compact MOS transistor model is outlined. This correspondence compares some results of this paper with previous relevant publications.
Keywords :
MOSFET; semiconductor device models; MOS transistor channel; MOSFET; compact MOS transistor model; drain current; inversion charge density; MOSFETs; Semiconductor device modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.803789
