Optimization of LDD devices for cryogenic operation

Author

Song, M. ; Cable, James S. ; Woo, Jason C S ; MacWiliams, K.P.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

12

Issue

7

fYear

1991

fDate

7/1/1991 12:00:00 AM

Firstpage

375

Lastpage

378

Abstract

The optimization of lightly doped drain (LDD) devices to maximize hot-carrier device lifetime at cryogenic temperature is studied. The hot-carrier-induced device degradation behavior and mechanisms of the various LDD and conventional devices are investigated. Carefully designed LDD devices can have better device reliability at low temperature compared to the conventional devices. However, the device lifetime is very short at low temperature for all the devices, and the difference in device lifetime between LDD and control devices is not appreciably large. The degradation behavior of both LDD and non-LDD devices at 77 K does not follow the simple behavior modeled by substrate current. For a given device, the maximum degradation is not observed at the bias condition for maximum substrate current. The optimum LDD design depends on the specific stressing bias conditions at 77 K.<>

Keywords

cryogenics; hot carriers; insulated gate field effect transistors; reliability; 77 K; LDD devices; MOSFET; cryogenic operation; device degradation behavior; device reliability; hot-carrier device lifetime; lightly doped drain; low temperature; stressing bias conditions; Aerospace engineering; Cryogenics; Current measurement; Degradation; Electric variables measurement; Hot carriers; Implants; Superconducting cables; Temperature; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.103612

Filename

103612