Millimeter-wave AlGaAs/GaAs p-n-p HBT

Author

Slater, David B., Jr. ; Enquist, Paul M. ; Chen, Mary Y. ; Hutchby, James A. ; Morris, Arthur S. ; Trew, Robert J.

Author_Institution

Res. Triangle Inst., Research Triangle Park, NC, USA

Volume

12

Issue

7

fYear

1991

fDate

7/1/1991 12:00:00 AM

Firstpage

382

Lastpage

384

Abstract

The total emitter-to-collector delay for a p-n-p AlGaAs/GaAs heterojunction bipolar transistor (HBT) has been reduced to 5.7 ps by extending the cutoff frequency for these devices to the millimeter-wave range. A total charging delay of 1.2 ps was obtained by a lightly doped emitter and by reducing the collector resistance. Low transit delays totaling 4.5 ps were achieved with a thin (440 AA) uniformly doped base and a thin (2800 AA) collector. The reduction in these delays permitted a non-self-aligned (1- mu m emitter mesa/base contact separation) device with two emitters (2.6*10 mu m/sup 2/ each) and a single base contact to exhibit an f/sub t/ of 28 GHz.<>

Keywords

III-V semiconductors; aluminium compounds; delays; gallium arsenide; heterojunction bipolar transistors; solid-state microwave devices; 1.2 to 5.7 ps; 28 GHz; MM-wave device; cutoff frequency; delay reduction; emitter-to-collector delay; heterojunction bipolar transistor; lightly doped emitter; millimeter-wave range; nonself aligned device; p-n-p HBT; total charging delay; transit delays; uniformly doped base; Charge carrier processes; Cutoff frequency; Delay effects; Doping; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Ion implantation; Millimeter wave technology; Monolithic integrated circuits;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.103614

Filename

103614