DocumentCode
828581
Title
Molecular beam epitaxial GaAs/Al/sub 0.2/Ga/sub 0.8/As p-channel field-effect transistors on
Author
Li, W.Q. ; Bhattacharya, Pallab K.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume
12
Issue
7
fYear
1991
fDate
7/1/1991 12:00:00 AM
Firstpage
385
Lastpage
386
Abstract
P-channel and n-channel heterostructure field effect transistors (HFETs) have been simultaneously fabricated by one-step molecular beam epitaxial growth of Si-doped Al/sub 0.2/Ga/sub 0.8/As/GaAs heterostructures on patterned
Keywords
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; molecular beam epitaxial growth; semiconductor doping; 23 mS; 250 mS; Al/sub 0.2/Ga/sub 0.8/As-GaAs:Si; GaAs substrates; HFET; Si doped heterostructure; field-effect transistors; heterostructure field effect transistors; molecular beam epitaxial growth; n-channel; one-step MBE; p-channel; patterned; transconductance; Doping; FETs; Gallium arsenide; Gold; HEMTs; MODFETs; Molecular beam epitaxial growth; Substrates; Temperature; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.103615
Filename
103615
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