Title :
Molecular beam epitaxial GaAs/Al/sub 0.2/Ga/sub 0.8/As p-channel field-effect transistors on
Author :
Li, W.Q. ; Bhattacharya, Pallab K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
7/1/1991 12:00:00 AM
Abstract :
P-channel and n-channel heterostructure field effect transistors (HFETs) have been simultaneously fabricated by one-step molecular beam epitaxial growth of Si-doped Al/sub 0.2/Ga/sub 0.8/As/GaAs heterostructures on patterned
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; molecular beam epitaxial growth; semiconductor doping; 23 mS; 250 mS; Al/sub 0.2/Ga/sub 0.8/As-GaAs:Si; GaAs substrates; HFET; Si doped heterostructure; field-effect transistors; heterostructure field effect transistors; molecular beam epitaxial growth; n-channel; one-step MBE; p-channel; patterned; transconductance; Doping; FETs; Gallium arsenide; Gold; HEMTs; MODFETs; Molecular beam epitaxial growth; Substrates; Temperature; Voltage;
Journal_Title :
Electron Device Letters, IEEE
