Title :
High-voltage current saturation in emitter switched thyristors
Author :
Shekar, M.S. ; Baliga, B.J. ; Nandakumar, M. ; Tandon, S. ; Reisman, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fDate :
7/1/1991 12:00:00 AM
Abstract :
Current saturation at high voltages in MOS-gated emitter switched thyristors (ESTs) is demonstrated. It is shown that by using an improved EST structure containing a dual-channel lateral MOSFET, the thyristor current can be saturated to high voltages through MOS gate control. In experimental devices with 600-V forward blocking capability, it is observed that current densities of 110 A/cm/sup 2/ could be saturated up to 450 V with a gate bias of 3.5 V. Experimental measurements and numerical simulations indicate that, during current saturation, the voltage appears across the junction between the P-base region and the N/sup -/ drift region and not across the lateral MOSFET.<>
Keywords :
electric current; thyristors; 3.5 V; 450 V; 600 V; MOS gate control; dual-channel lateral MOSFET; emitter switched thyristors; forward blocking capability; gate bias; high voltages; Cathodes; Current density; Current measurement; Density measurement; Impedance; Insulated gate bipolar transistors; MOSFET circuits; Numerical simulation; Threshold voltage; Thyristors;
Journal_Title :
Electron Device Letters, IEEE
