Title :
Over 80 Gbit/s 2:1 multiplexer and low power selector ICs using InP/InGaAs DHBTs
Author :
Makon, R.E. ; Lang, M. ; Driad, R. ; Schneider, K. ; Ludwig, M. ; Aidam, R. ; Quay, R. ; Schlechtweg, M. ; Weimann, G.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
fDate :
5/26/2005 12:00:00 AM
Abstract :
A 2:1 multiplexer (MUX) and low power selector ICs have been successfully designed and manufactured using an InP/InGaAs DHBT technology. The 2:1 MUX has been tested at data rates up to 80 Gbit/s with an output swing of 600 mV, while the selector IC has achieved operation speed up to 90 Gbit/s at a power consumption of only 385 mW.
Keywords :
III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; low-power electronics; multiplexing equipment; 2:1 MUX; 2:1 multiplexer; 385 mW; 600 mV; 80 Gbit/s; 90 Gbit/s; DHBT technology; InP-InGaAs; low power selector IC;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20050301
