Title :
Light-emitting transistor based on real-space transfer: electrical and optical properties
Author :
Mastrapasqua, Marco ; Luryi, Serge ; Capasso, Federico ; Hutchinson, Albert L. ; Sivco, Deborah L. ; Cho, Alfred Y.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
2/1/1993 12:00:00 AM
Abstract :
The charge injection transistor is implemented in InGaAs/InAlAs/InGaAs heterostructure material, grown by molecular beam epitaxy. A complementary collector of p-type conductivity is used for the first time. The real-space transfer of hot electrons leads to a luminescence signal proportional to the injection current. The radiative efficiency is significantly enhanced by a double-heterostructure design of the collector active region, which confines the injected minority carriers. The internal quantum efficiency of the light-emitting transistor is comparable to that of light-emitting diodes. Due to peculiar symmetry of real-space transfer, the optical output signal follows an exclusive-OR function of input voltages. Functional logic operation of the device is demonstrated at room temperature
Keywords :
III-V semiconductors; aluminium compounds; electroluminescence; gallium arsenide; hot electron transistors; indium compounds; leakage currents; light emitting devices; optical logic; CHINT; InGaAs-InAlAs-InGaAs heterostructure; InP substrate; charge injection transistor; complementary collector; double-heterostructure design; exclusive-OR function; functional logic operation; hot electrons; internal quantum efficiency; leakage current; light-emitting transistor; luminescence signal; minority carrier confinement; molecular beam epitaxy; optical output signal; optical properties; radiative efficiency; real-space transfer; Carrier confinement; Conducting materials; Conductivity; Electrons; Indium compounds; Indium gallium arsenide; Light emitting diodes; Luminescence; Molecular beam epitaxial growth; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
