Title :
Modeling temperature effects in the DC I-V characteristics of GaAs MESFET´s
Author :
Selmi, Luca ; Riccò, Bruno
Author_Institution :
Dept. of Electron., Bologna Univ., Italy
fDate :
2/1/1993 12:00:00 AM
Abstract :
A simple model is presented to account for the main temperature effects influencing the DC performance of GaAs MESFETs. The model is based on a consistent solution of heat flow and current equations that accounts for nonuniform power dissipation within the device. The simulation results are satisfactorily compared with experimental data obtained with pulsed and DC measurements performed on conventional devices as well as on suitable test structures
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; heat transfer; semiconductor device models; DC I-V characteristics; DC measurements; GaAs; MESFETs; current equations; heat flow; model; nonuniform power dissipation; pulsed measurements; simulation; temperature effects; Distortion measurement; Electric variables measurement; Electronic packaging thermal management; Gallium arsenide; MESFETs; Performance evaluation; Power dissipation; Pulse measurements; Temperature measurement; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on
