DocumentCode :
828934
Title :
Iridium Schottky contact on In0.52Al0.48As
Author :
Kim, S. ; Cueva, G. ; Adesida, I.
Author_Institution :
Micro & Nanotechnol. Lab., Illinois Univ., Urbana, IL, USA
Volume :
41
Issue :
11
fYear :
2005
fDate :
5/26/2005 12:00:00 AM
Firstpage :
665
Lastpage :
667
Abstract :
The Schottky barrier properties of Ir on In0.52Al0.48As have been measured after annealing up to 500°C. The barrier height increases to 818 meV for samples annealed at 475°C, while that of Pt quickly saturates at 800 meV beyond 200°C. The result indicates a potential for Ir as a stable gate metallisation for InAlAs/InGaAs HEMTs.
Keywords :
III-V semiconductors; Schottky barriers; aluminium compounds; annealing; high electron mobility transistors; indium compounds; iridium; metallisation; 475 C; 500 C; 800 meV; 818 meV; In0.52Al0.48As-Ir; InAlAs/InGaAs HEMT; Schottky barrier properties; annealing; barrier height; iridium Schottky contact; stable gate metallisation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20051022
Filename :
1437888
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=828934
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