• DocumentCode
    828934
  • Title

    Iridium Schottky contact on In0.52Al0.48As

  • Author

    Kim, S. ; Cueva, G. ; Adesida, I.

  • Author_Institution
    Micro & Nanotechnol. Lab., Illinois Univ., Urbana, IL, USA
  • Volume
    41
  • Issue
    11
  • fYear
    2005
  • fDate
    5/26/2005 12:00:00 AM
  • Firstpage
    665
  • Lastpage
    667
  • Abstract
    The Schottky barrier properties of Ir on In0.52Al0.48As have been measured after annealing up to 500°C. The barrier height increases to 818 meV for samples annealed at 475°C, while that of Pt quickly saturates at 800 meV beyond 200°C. The result indicates a potential for Ir as a stable gate metallisation for InAlAs/InGaAs HEMTs.
  • Keywords
    III-V semiconductors; Schottky barriers; aluminium compounds; annealing; high electron mobility transistors; indium compounds; iridium; metallisation; 475 C; 500 C; 800 meV; 818 meV; In0.52Al0.48As-Ir; InAlAs/InGaAs HEMT; Schottky barrier properties; annealing; barrier height; iridium Schottky contact; stable gate metallisation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20051022
  • Filename
    1437888
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=828934