• DocumentCode
    828952
  • Title

    A comparison of cleaning procedures for removing potassium from wafers exposed to KOH

  • Author

    Aslam, Mohammad ; Artz, Bruce E. ; Kaberline, Steven L. ; Prater, Thomas J.

  • Author_Institution
    Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA
  • Volume
    40
  • Issue
    2
  • fYear
    1993
  • fDate
    2/1/1993 12:00:00 AM
  • Firstpage
    292
  • Lastpage
    295
  • Abstract
    Silicon, oxidized silicon, and silicon nitride on silicon wafers were exposed to KOH etchant. Three cleaning procedures were used and the remaining surface potassium measured by C-V and SIMS techniques. Bare silicon appears to be the most difficult to clean, followed by oxide, and then nitride. The cleaning procedures appear to be equally effective
  • Keywords
    etching; potassium; secondary ion mass spectra; semiconductor technology; silicon; silicon compounds; surface treatment; C-V characteristics; KOH etchant; SIMS; Si; Si3N4; SiO2; cleaning procedures; surface K removal; Capacitance-voltage characteristics; Etching; Micromachining; Performance analysis; Silicon; Surface charging; Surface cleaning; Surface contamination; Very large scale integration; Water pollution;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.182503
  • Filename
    182503
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=828952