Title :
A comparison of cleaning procedures for removing potassium from wafers exposed to KOH
Author :
Aslam, Mohammad ; Artz, Bruce E. ; Kaberline, Steven L. ; Prater, Thomas J.
Author_Institution :
Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA
fDate :
2/1/1993 12:00:00 AM
Abstract :
Silicon, oxidized silicon, and silicon nitride on silicon wafers were exposed to KOH etchant. Three cleaning procedures were used and the remaining surface potassium measured by C-V and SIMS techniques. Bare silicon appears to be the most difficult to clean, followed by oxide, and then nitride. The cleaning procedures appear to be equally effective
Keywords :
etching; potassium; secondary ion mass spectra; semiconductor technology; silicon; silicon compounds; surface treatment; C-V characteristics; KOH etchant; SIMS; Si; Si3N4; SiO2; cleaning procedures; surface K removal; Capacitance-voltage characteristics; Etching; Micromachining; Performance analysis; Silicon; Surface charging; Surface cleaning; Surface contamination; Very large scale integration; Water pollution;
Journal_Title :
Electron Devices, IEEE Transactions on
