Title :
X-ray imaging camera tube using sputter-deposited CdTe/CdS heterojunction
Author :
Tomita, Yasuhiro ; Hatanaka, Yoshinori ; Takabayashi, Toshio ; Kawai, Toshiaki
Author_Institution :
Hamamatsu Photonics Co., Shizuoka, Japan
fDate :
2/1/1993 12:00:00 AM
Abstract :
CdTe heterojunction devices have been fabricated for the first time by an RF sputter deposition method for application to X-ray imaging sensors. The electrical resistivities of sputter-deposited polycrystalline CdS and CdTe films are greater than 106 Ω-cm and 109 Ω-cm, respectively. The fabricated CdS/CdTe heterojunction sensor shows a good diode characteristic and a high sensitivity to X-ray radiation. An X-ray imaging camera tube consisting of CdS/CdTe heterojunction photoconductive target shows three times larger responsivity to X-rays than the conventional PbO X-ray tube. The dark current density of the device is observed to be lower than 10 nA/cm2 at 20 V target voltage at room temperature
Keywords :
II-VI semiconductors; X-ray detection and measurement; cadmium compounds; image sensors; photoconducting devices; semiconductor growth; sputter deposition; 106 ohmcm; 109 ohmcm; CdTe-CdS heterojunction; RF sputter deposition; X-ray imaging camera tube; X-ray imaging sensors; dark current density; electrical resistivities; photoconductive target; Cameras; Diodes; Electric resistance; Heterojunctions; Image sensors; Photoconductivity; Radio frequency; Sensor phenomena and characterization; Sputtering; X-ray imaging;
Journal_Title :
Electron Devices, IEEE Transactions on
