Nondestructive readout mode static induction transistor (SIT) photo sensors

The nondestructive readout (NDRO) performance of two static induction transistor (SIT) photosensors, a 40×40 pixel area array and a 140-b linear array, is examined. NDRO operation in the SIT sensors is demonstrated by imaging with the area array and by examining the output waveform of the linear array. The charge lost per NDRO cycle in the linear array was 0.014% near the saturation signal level, and no charge loss could be detected at the ⩽0.5 saturation level. NDRO performance in the area array was degraded compared to the linear array, due to the larger value of the load capacitance connected to the output electrode of the SIT. NDRO operation also enables the cancellation of both the photosite reset noise and the signal nonuniformity by subtracting the first NDRO output from the following NDRO outputs, as well as the advantage of monitoring the signal state during the integration period