Title :
A 4.5-mW Closed-Loop
Micro-Gravity CMOS SOI Accelerometer
Author :
Amini, Babak Vakili ; Abdolvand, Reza ; Ayazi, Farrokh
Author_Institution :
Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
In this paper, design, implementation and characterization of a 3-V switched-capacitor (SC) DeltaSigma CMOS interface circuit for the closed-loop operation of a lateral capacitive micro-gravity silicon-on-insulator (SOI) accelerometer is presented. The interface circuit is based on a front-end programmable reference-capacitorless SC charge amplifier and a back-end second-order SC DeltaSigma modulator. The accelerometer is fabricated through a dry-release high aspect-ratio reduced-gap process. By incorporating the low-Q transfer function of the microaccelerometer in a feedback loop, the system´s dynamic range is improved by 20 dB, leading to a measured resolution of 4 mug/radicHz and an output dynamic range of 95 dB at 20 Hz. The bias instability is 2 to 8 mug for 12 hours. The chip is fabricated in the 0.5-mum standard CMOS process with an area of 2.25 mm2. The integrated circuit (IC) consumes 4.5 mW of power
Keywords :
CMOS integrated circuits; accelerometers; delta-sigma modulation; silicon-on-insulator; switched capacitor networks; 0.5 micron; 12 hours; 20 Hz; 3 V; 4.5 mW; CMOS process; back-end second-order SC DeltaSigma modulator; capacitive interface circuit; closed-loop DeltaSigma micro-gravity CMOS SOI accelerometer; force-rebalanced feedback; front-end programmable reference-capacitorless SC charge amplifier; microelectromechanical systems; quantization noise; silicon-on-insulator; switched-capacitor CMOS interface circuit; Accelerometers; CMOS process; Delta modulation; Dynamic range; Feedback loop; Modulation coding; Semiconductor device measurement; Silicon on insulator technology; Switching circuits; Transfer functions; Capacitive interface circuit; Delta-Sigma modulator; force-rebalanced feedback; micro-electromechanical systems (MEMS); micro-gravity accelerometer; quantization noise;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2006.884864