Title :
An a-Si:H photoconductive sensor with a gate electrode
Author :
Takayama, Satoshi ; Mori, Ken-Ichi ; Suzuki, Kouhei ; Tanuma, Chiaki
Author_Institution :
Toshiba R&D Center, Kawasaki, Japan
fDate :
2/1/1993 12:00:00 AM
Abstract :
A hydrogenated amorphous silicon photoconductive sensor with a gate electrode is developed for a matrix-driven linear image sensor array. The photoresponse time for this new sensor is about 1/3 of that for a conventional photoconductive sensor. A new dynamic model is proposed to analyze the photoresponse characteristics for this sensor. The minimum photoresponse time predicted by the calculation is about 2 ms. This value is markedly short compared with that for a conventional photoconductive sensor (about 5 ms)
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; image sensors; photoconducting devices; photodetectors; semiconductor device models; silicon; 2 ms; amorphous Si:H photoconductive sensor; dynamic model; gate electrode; interface space charge approximation; matrix-driven linear image sensor array; photoresponse time; Chemical sensors; Conductive films; Electrodes; Image sensors; Photoconductivity; Sensor arrays; Sensor phenomena and characterization; Thin film circuits; Thin film sensors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
