Title :
A GaAs Schottky-barrier photodiode with high quantum efficiency-bandwidth product using a multilayer reflector
Author :
Tzeng, Yen-Chang ; Li, Sheng S. ; Ho, Pin
Author_Institution :
Florida Univ., Gainesville, FL, USA
fDate :
2/1/1993 12:00:00 AM
Abstract :
A GaAs Schottky-barrier with high quantum efficiency-bandwidth product has been developed by using a GaAs/Al0.25Ga0.75 As multilayer reflector. The multilayer reflector structure wa designed by using the scattering matrix method. By growing four pairs of Al0.25Ga0.75As (825 Å)/GaAs (330 Å) multilayer reflectors between the undoped GaAs active layer and the buffer layer, a responsivity of 0.6 A/W at λ=0.84 μm was obtained for this device. This represents a 30% improvement over the device without a multilayer reflector. The response speed of the photodiode was measured by the impulse response method, and the results yielded a rise time of 38.45 ps, corresponding to a bandwidth of 9 GHz for this detector
Keywords :
III-V semiconductors; Schottky-barrier diodes; aluminium compounds; gallium arsenide; photodetectors; photodiodes; transient response; 0.5 to 0.9 micron; 0.84 micron; 38.45 ps; 9 GHz; GaAs-Al0.25Ga0.75As multilayer reflector; Schottky-barrier photodiode; high quantum efficiency-bandwidth product; impulse response method; response speed; rise time; scattering matrix method; Absorption; Bandwidth; Buffer layers; Detectors; Gallium arsenide; Indium gallium arsenide; Light scattering; Nonhomogeneous media; PIN photodiodes; Particle scattering;
Journal_Title :
Electron Devices, IEEE Transactions on
