Title :
Experimental characterization of the diode-type polysilicon loads for CMOS SRAM
Author :
Kalnitsky, Alexander ; Li, Jia ; Chen, C. E Daniel
Author_Institution :
SGS-Thomson Microelectronics, Inc., Carrollton, TX, USA
fDate :
2/1/1993 12:00:00 AM
Abstract :
Experimental characterization of the diode-type n+-p-n + poly-Si loads for SRAM applications demonstrates that the resistance of the structure and its response to the bit-line voltages are dominated by such properties of the parasitic thin-film transistor associated with this device as fixed positive charge and `gate´ oxide thickness. Topographical effects observed in this study are interpreted in terms of the thickness variation of a dielectric overlaying the poly-Si feature and the fixed positive charges present in this dielectric in the vicinity of the poly-Si surface
Keywords :
CMOS integrated circuits; SRAM chips; contact resistance; integrated circuit testing; interface electron states; rapid thermal processing; scanning electron microscopy; CMOS SRAM; RTA; SEM; Si-SiO2; SiO2-Si3N4 interface; bit-line voltages; dielectric thickness variation; diode-type polysilicon loads; fixed positive charge; gate oxide thickness; n+-p-n+ structure resistance; parasitic thin-film transistor; topographical effects; Contacts; Dielectrics; Diodes; Doping; Fabrication; Hydrogen; Manufacturing; Random access memory; Resistors; Surface resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
