Electron–Phonon Energy Relaxation Time in Thin Strongly Disordered Titanium Nitride Films

Author

Kardakova, A.I. ; Coumou, P.C.J.J. ; Finkel, M.I. ; Morozov, D.V. ; An, P.P. ; Goltsman, Gregory N. ; Klapwijk, Teunis M.

Author_Institution

Phys. Dept., Moscow State Pedagogical Univ., Moscow, Russia

Volume

25

Issue

3

fYear

2015

fDate

Jun-15

Firstpage

1

Lastpage

4

Abstract

We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τ_eph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T^-3 temperature dependence, which are consistent with values of τ_eph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor.

Keywords

atomic layer deposition; electron-phonon interactions; sputter deposition; superconducting materials; superconducting thin films; titanium compounds; TiN; atomic layer deposition; effective elastic mean free path; electron bath; electron-phonon energy relaxation time; sputtered films; superconductor; temperature 3.4 K to 1.7 K; thin strongly disordered titanium nitride films; Films; Scattering; Superconducting films; Superconducting microwave devices; Temperature dependence; Temperature measurement; Tin; ALD; TiN; electron-phonon interaction; electron???phonon interaction; thin films;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/TASC.2014.2364516

Filename

6933930