Title :
Electron–Phonon Energy Relaxation Time in Thin Strongly Disordered Titanium Nitride Films
Author :
Kardakova, A.I. ; Coumou, P.C.J.J. ; Finkel, M.I. ; Morozov, D.V. ; An, P.P. ; Goltsman, Gregory N. ; Klapwijk, Teunis M.
Author_Institution :
Phys. Dept., Moscow State Pedagogical Univ., Moscow, Russia
Abstract :
We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τeph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T-3 temperature dependence, which are consistent with values of τeph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor.
Keywords :
atomic layer deposition; electron-phonon interactions; sputter deposition; superconducting materials; superconducting thin films; titanium compounds; TiN; atomic layer deposition; effective elastic mean free path; electron bath; electron-phonon energy relaxation time; sputtered films; superconductor; temperature 3.4 K to 1.7 K; thin strongly disordered titanium nitride films; Films; Scattering; Superconducting films; Superconducting microwave devices; Temperature dependence; Temperature measurement; Tin; ALD; TiN; electron-phonon interaction; electron???phonon interaction; thin films;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2014.2364516
