DocumentCode :
829232
Title :
New materials and processes for flat panel X-ray detectors
Author :
Street, R.A. ; Lu, J.-P. ; Ready, S.R.
Volume :
150
Issue :
4
fYear :
2003
Abstract :
Flat panel X-ray imagers using amorphous silicon active matrix addressing have been introduced to the medical imaging market at sizes up to 40×40 cm and with up to 10 million pixels. Some new technology developments, which can further increase the performance of these devices, are described. High atomic number polycrystalline X-ray photoconductors can operate near the theoretical sensitivity and at reasonably low bias voltages. The higher sensitivity obtained in HgI2 allows single-photon detection, which opens up new imaging opportunities. Another approach to improve sensitivity is to integrate an amplifier at the pixel level, which requires laser-recrystallised polysilicon transistors. A pixel-level source follower amplifier is shown to have enough gain to overcome other noise sources. A three-dimensional device structure is needed to accommodate the pixel electronics, and so the sensor is deposited on top of the electronics, separated by a thick passivation layer. Future possible detector technologies based on printing and organic semiconductors are discussed
Keywords :
X-ray detection <flat panel X-ray detectors, materials and procs.>; X-ray imaging <flat panel X-ray detectors, materials and procs.>; biomedical imaging <flat panel X-ray detectors, materials and procs.>; mercury compounds <flat panel X-ray detectors, materials and procs.>; photoconducting materials <flat panel X-ray detectors, materials and procs.>; semiconductor materials <flat panel X-ray detectors, materials and procs.>; silicon <flat panel X-ray detectors, materials and procs.>; thin film transistors <flat panel X-ray detectors, materials and procs.>; 3D device structure; 40 cm; HgI2; Si; X-ray photoconductors; flat panel X-ray detectors; high atomic number polycrystalline photoconductors; laser-recrystallised polysilicon transistors; medical imaging; organic semiconductors; pixel level amplifier; printing; single-photon detection; source follower amplifier;
fLanguage :
English
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2409
Type :
jour
DOI :
10.1049/ip-cds:20030555
Filename :
1245963
Link To Document :
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