• DocumentCode
    829232
  • Title

    New materials and processes for flat panel X-ray detectors

  • Author

    Street, R.A. ; Lu, J.-P. ; Ready, S.R.

  • Volume
    150
  • Issue
    4
  • fYear
    2003
  • Abstract
    Flat panel X-ray imagers using amorphous silicon active matrix addressing have been introduced to the medical imaging market at sizes up to 40×40 cm and with up to 10 million pixels. Some new technology developments, which can further increase the performance of these devices, are described. High atomic number polycrystalline X-ray photoconductors can operate near the theoretical sensitivity and at reasonably low bias voltages. The higher sensitivity obtained in HgI2 allows single-photon detection, which opens up new imaging opportunities. Another approach to improve sensitivity is to integrate an amplifier at the pixel level, which requires laser-recrystallised polysilicon transistors. A pixel-level source follower amplifier is shown to have enough gain to overcome other noise sources. A three-dimensional device structure is needed to accommodate the pixel electronics, and so the sensor is deposited on top of the electronics, separated by a thick passivation layer. Future possible detector technologies based on printing and organic semiconductors are discussed
  • Keywords
    X-ray detection <flat panel X-ray detectors, materials and procs.>; X-ray imaging <flat panel X-ray detectors, materials and procs.>; biomedical imaging <flat panel X-ray detectors, materials and procs.>; mercury compounds <flat panel X-ray detectors, materials and procs.>; photoconducting materials <flat panel X-ray detectors, materials and procs.>; semiconductor materials <flat panel X-ray detectors, materials and procs.>; silicon <flat panel X-ray detectors, materials and procs.>; thin film transistors <flat panel X-ray detectors, materials and procs.>; 3D device structure; 40 cm; HgI2; Si; X-ray photoconductors; flat panel X-ray detectors; high atomic number polycrystalline photoconductors; laser-recrystallised polysilicon transistors; medical imaging; organic semiconductors; pixel level amplifier; printing; single-photon detection; source follower amplifier;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices and Systems, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2409
  • Type

    jour

  • DOI
    10.1049/ip-cds:20030555
  • Filename
    1245963