Recombination in silicon thin-film solar cells: a study of electrically detected magnetic resonance

Author

Lips, K. ; Boehme, C. ; Fuhs, W.

Volume

150

Issue

4

fYear

2003

Abstract

A review of recombination in silicon thin-film solar cells studied by means of electrically detected magnetic resonance (EDMR) is presented. It is shown that the EDMR results in μc-Si:H p-i-n solar cells can be described by a simple diffusion model that was developed for crystalline silicon p-n junctions assuming that recombination is dominated by dangling bonds in the space charge region. The results are compared to a-Si:H p-i-n cells and discussed in a recombination model involving the excited states of charged dangling bonds

Keywords

dangling bonds <Si thin-film solar cells, recomb.>; electron-hole recombination <Si thin-film solar cells, recomb.>; elemental semiconductors <Si thin-film solar cells, recomb.>; semiconductor device models <Si thin-film solar cells, recomb.>; silicon <thin-film solar cells, recomb.>; solar cells <Si thin-film solar cells, recomb.>; space charge <Si thin-film solar cells, recomb.>; thin film devices <Si thin-film solar cells, recomb.>; Si; Si thin-film solar cells; charged dangling bonds; diffusion model; electrically detected magnetic resonance; excited states; recombination model; space charge region;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:20030578

Filename

1245971