Title :
1/f noise in hydrogenated amorphous silicon-germanium alloys
Author :
Johanson, R.E. ; Günes, M. ; Kasap, S.O.
Author_Institution :
Dept. of Electr. Eng., Univ. of Saskatchewan, Saskatoon, Sask., Canada
Abstract :
Measurements were made of conductance noise of a-Si:H and a-Si1-xGex:H in two different geometries: one where the current flow is transverse to the surface and the other where it is longitudinal to the surface. Because of the large change in sample resistance between the two geometries, it was not possible to measure both geometries at the same temperature. For both geometries, alloying with up to 40% Ge reduces the noise magnitude by several orders of magnitude over that found in a-Si:H. The decrease is incompatible with several popular noise models. Extrapolating the temperature trends for each geometry shows that it is possible that the noise observed in the transverse samples has the same origin as the higher frequency part of the double power law spectra observed in the longitudinal samples
Keywords :
1/f noise <hydrogenated amorph. Si-Ge alloys, 1/f noise>; Ge-Si alloys <hydrogenated amorph. Si-Ge alloys, 1/f noise>; semiconductor device noise <hydrogenated amorph. Si-Ge alloys, 1/f noise>; semiconductor materials <hydrogenated amorph. Si-Ge alloys, 1/f noise>; solar cells <hydrogenated amorph. Si-Ge alloys, 1/f noise>; 1/f noise; Si:H; Si1-xGex:H; a-Si:H; a-Si1-xGex:H; conductance noise; double power law spectra; longitudinal current flow; noise magnitude; sample resistance; temperature trends; transverse current flow;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:20030749
