DocumentCode :
829400
Title :
A Packaging Solution for Optically Testing Wire-Bonded Chips
Author :
Tosi, Alberto ; Stellari, Franco ; Zappa, Franco ; Song, Peilin
Author_Institution :
Dipt. di Elettron. e Inf., Politec. di Milano, Milan
Volume :
31
Issue :
3
fYear :
2008
Firstpage :
490
Lastpage :
495
Abstract :
In this paper, we describe the design and the experimental characterization of a packaging technique for backside optical testing of chips requiring wirebonding. Optical testing methods, based either on the collection of spontaneous hot-carrier photoemission or on laser stimulation, require an optical access to the active area of the circuit through the backside of the chip, while still providing mechanical support to the thinned die (very fragile), heat sinking capability, power and electrical signals. The proposed package fulfils all these requirements and it can hence be used for picosecond imaging for circuit analysis/time resolved emission measurements, emission microscopy investigations, laser voltage probe, thermal laser stimulation, photoelectric laser stimulation, and other failure analysis methods that require optical access to the transistor level through the silicon backside. The advantages of the new package are its versatility (it can fit different chip sizes), easy handling, low cost, and the fact that it is designed for optical testing and not just for electrical testing. We successfully used the proposed package for optically test chips in advanced complementary metal-oxide-semiconductor technologies (65 nm): measurements at low voltage are possible thanks to the proposed package.
Keywords :
CMOS integrated circuits; MOSFET; chip scale packaging; failure analysis; heat sinks; hot carriers; integrated circuit measurement; integrated circuit testing; laser beam applications; lead bonding; photoemission; CMOS measurements; MOSFET; Si; advanced complementary metal-oxide-semiconductor technologies; circuit analysis; electrical signals; emission microscopy investigations; failure analysis methods; heat sinking capability; laser voltage probe; optically testing wire-bonded chips; picosecond imaging; silicon backside; size 65 nm; spontaneous hot-carrier photoemission; thermal laser stimulation; thinned die; time resolved emission measurements; Circuit testing; Hot carriers; Optical design; Optical design techniques; Optical microscopy; Packaging; Photoelectricity; Power lasers; Semiconductor device measurement; Stimulated emission; Complementary metal–oxide–semiconductor (CMOS); emission; laser; metal–oxide–semiconductor field-effect transistor (MOSFET); optical testing; package; photoemission; picosecond imaging for circuit analysis (PICA); testing; time resolved emission (TRE);
fLanguage :
English
Journal_Title :
Advanced Packaging, IEEE Transactions on
Publisher :
ieee
ISSN :
1521-3323
Type :
jour
DOI :
10.1109/TADVP.2008.927823
Filename :
4591495
Link To Document :
بازگشت