DocumentCode :
829479
Title :
New test paradigms for yield and manufacturability
Author :
Madge, Robert
Author_Institution :
LSI Logic, Milpitas, CA, USA
Volume :
22
Issue :
3
fYear :
2005
Firstpage :
240
Lastpage :
246
Abstract :
As CMOS technology continues its trend down the technology nodes through 90 nm to 14 nm, our industry faces the challenge of achieving necessary yield as we integrate more on-chip circuitry having more complex, advanced process technologies. These technologies are generally less scalable than in the past, which means we´re involved in a completely new yield ramp almost every two years. Closing the loop from semiconductor manufacturing back to design and process development is crucial. The author explored the nanometer-era semiconductor yield challenges, classified the yield limiting problems, and discussed how to close the loop back to design and process development. This analysis, summarized in this perspectives, reveals the key role of test and the data it generates to optimize semiconductor yield for the next generation.
Keywords :
CMOS integrated circuits; design for manufacture; design for testability; integrated circuit testing; integrated circuit yield; logic testing; process monitoring; system-on-chip; CMOS technology; nanometer-era semiconductor yield challenges; on-chip circuitry; process development; semiconductor manufacturing; Bridges; Computer aided manufacturing; Inspection; Large scale integration; Logic testing; Manufacturing processes; Process design; Semiconductor device manufacture; Semiconductor device testing; System testing; nanometer-era semiconductor; test paradigm; yield and manufacturability;
fLanguage :
English
Journal_Title :
Design & Test of Computers, IEEE
Publisher :
ieee
ISSN :
0740-7475
Type :
jour
DOI :
10.1109/MDT.2005.67
Filename :
1438279
Link To Document :
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