Title :
A
31.5 dBm CMOS RF Doherty Power Amplifier for Wireless Communications
Author :
Wongkomet, Naratip ; Tee, Luns ; Gray, Paul R.
Author_Institution :
Marvell Semicond., Santa Clara, CA
Abstract :
A fully differential Doherty power amplifier (PA) is implemented in a 0.13-mum CMOS technology. The prototype achieves a maximum output power of +31.5 dBm with a peak power-added efficiency (PAE) of 36% (39% drain efficiency) with a GMSK modulated signal. The PAE is kept above 18% over a 10 dB range of output power. With a GSM/EDGE input signal, the measured peak output power while still meeting the GSM/EDGE mask and error vector magnitude (EVM) requirements is +25dBm with a peak PAE of 13% (PAE is 6% at 12 dB back-off). Instead of using a bulky lambda/4 transmission line, a passive impedance inverter is implemented as a compact lumped-element network. All circuit components are fully integrated on a single CMOS die except for an off-chip capacitor for output matching and baluns. The die size is 2.8times3.2mm2 including all pads and bypass capacitors
Keywords :
CMOS integrated circuits; UHF integrated circuits; UHF power amplifiers; baluns; cellular radio; impedance matching; 0.13 micron; 36 percent; CMOS RF power amplifier; CMOS technology; EDGE signal; GSM signal; UHF power amplifier; baluns; bulky transmission line; compact lumped-element network; differential Doherty power amplifier; error vector magnitude; off-chip capacitor; output matching; passive impedance inverter; wireless communications; CMOS technology; Capacitors; Differential amplifiers; GSM; Impedance matching; Power amplifiers; Power generation; Power measurement; Prototypes; Transmission line measurements; CMOS RF; Doherty amplifier; power amplifier; wireless communication;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2006.884832