Title :
Self-aligned chemically assisted ion-beam-etched GaAs/(Al,Ga)As turning mirrors for photonic applications
Author :
Appelman, Howard ; Levy, Joseph ; Pion, Martin ; Krebs, Danny ; Harding, Charlton ; Zediker, Mark
Author_Institution :
McDonnell Douglas Electron. Syst. Co., St. Louis, MO, USA
fDate :
1/1/1990 12:00:00 AM
Abstract :
It is shown that totally reflecting turning mirrors can be fabricated in GaAs/(Al,Ga)As graded-index separate-confinement-heterostructure single-quantum-well (GRIN-SCH SQW) material using Ti metal masking and Cl2 chemically assisted ion-beam-etching (CAIBE). Combined with ridge waveguides, these techniques have been used to make turning-mirror cleaved-facet lasers that have acceptable external slope efficiencies with a modest estimated increase in threshold current. Scanning electron microscope examination of the mirrors indicates some residual roughness attributed to the edge definition of the deposited titanium film. The mirror loss is estimated to be 68% for these particular turning mirrors. These components, which continue to be developed and improved, are being applied to increasingly sophisticated and demanding photonic programs
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; laser accessories; mirrors; optical losses; rectangular waveguides; scanning electron microscope examination of materials; semiconductor quantum wells; surface topography measurement; Cl2; GaAs-(AlGa)As; Ti metal masking; chemically assisted ion-beam-etched; cleaved-facet lasers; edge definition; external slope efficiencies; graded-index separate-confinement-heterostructure single-quantum-well; mirror loss; photonic applications; residual roughness; ridge waveguides; scanning electron microscopy; self-aligned turning mirrors; threshold current; titanium film; totally reflecting turning mirrors; turning mirrors; Chemical lasers; Electrons; Gallium arsenide; Inorganic materials; Laser modes; Mirrors; Optical materials; Threshold current; Turning; Waveguide lasers;
Journal_Title :
Lightwave Technology, Journal of
