Title :
A new readout circuit for an ultrahigh sensitivity CMOS image sensor
Author :
Watabe, Toshihisa ; Goto, Masahide ; Ohtake, Hiroshi ; Maruyama, Hirotaka ; Tanioka, Kenkichi
Author_Institution :
NHK Sci. & Tech. Res. Labs., Tokyo, Japan
fDate :
8/1/2002 12:00:00 AM
Abstract :
We have developed a new readout circuit for highly sensitive CMOS image sensors. The circuit makes it possible to obtain a high signal-to-noise ratio by effectively transferring signal charges accumulated in the photodiode to a small capacitance. We fabricated and tested a CMOS image sensor with the readout circuit, and confirmed that it has higher sensitivity than conventional passive-pixel CMOS image sensors.
Keywords :
CMOS image sensors; capacitance; high SNR; high signal-to-noise ratio; passive-pixel CMOS image sensors; photodiode; readout circuit; ultrahigh sensitivity CMOS image sensor; CMOS image sensors; Circuit testing; FETs; Image sensors; Parasitic capacitance; Photodiodes; Pixel; Signal to noise ratio; Solid state circuits; Voltage;
Journal_Title :
Consumer Electronics, IEEE Transactions on
DOI :
10.1109/TCE.2002.1037020
