• DocumentCode
    830213
  • Title

    A Temperature-Gradient-Induced Failure Mechanism in Metallization Under Fast Thermal Cycling

  • Author

    Smorodin, Tobias ; Wilde, Jürgen ; Alpern, Peter ; Stecher, Matthias

  • Author_Institution
    Infineon Technol. AG, Neubiberg
  • Volume
    8
  • Issue
    3
  • fYear
    2008
  • Firstpage
    590
  • Lastpage
    599
  • Abstract
    In this paper, a novel mechanism is shown to cause the failure evolution in a metallization system under fast temperature cycle stress. The failure evolution is triggered by the lateral temperature distribution across the device, which causes an accumulating plastic deformation of the metallization. The root cause for the deformation emerges at the position of the maximum gradient in temperature.
  • Keywords
    MOSFET; cracks; field effect transistor switches; plastic deformation; semiconductor device metallisation; semiconductor device testing; viscoplasticity; DMOS switch; DMOS transistor; cracking; double-diffused MOS; failure mechanism; fast thermal cycling; metallization; temperature gradient; thermomechanical stress; viscoplastic deformation; Interlayer dielectric (ILD) cracking; metallization failure; power cycling; short circuit; temperature cycling;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2008.2002359
  • Filename
    4595637