DocumentCode :
830213
Title :
A Temperature-Gradient-Induced Failure Mechanism in Metallization Under Fast Thermal Cycling
Author :
Smorodin, Tobias ; Wilde, Jürgen ; Alpern, Peter ; Stecher, Matthias
Author_Institution :
Infineon Technol. AG, Neubiberg
Volume :
8
Issue :
3
fYear :
2008
Firstpage :
590
Lastpage :
599
Abstract :
In this paper, a novel mechanism is shown to cause the failure evolution in a metallization system under fast temperature cycle stress. The failure evolution is triggered by the lateral temperature distribution across the device, which causes an accumulating plastic deformation of the metallization. The root cause for the deformation emerges at the position of the maximum gradient in temperature.
Keywords :
MOSFET; cracks; field effect transistor switches; plastic deformation; semiconductor device metallisation; semiconductor device testing; viscoplasticity; DMOS switch; DMOS transistor; cracking; double-diffused MOS; failure mechanism; fast thermal cycling; metallization; temperature gradient; thermomechanical stress; viscoplastic deformation; Interlayer dielectric (ILD) cracking; metallization failure; power cycling; short circuit; temperature cycling;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2008.2002359
Filename :
4595637
Link To Document :
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