DocumentCode
830213
Title
A Temperature-Gradient-Induced Failure Mechanism in Metallization Under Fast Thermal Cycling
Author
Smorodin, Tobias ; Wilde, Jürgen ; Alpern, Peter ; Stecher, Matthias
Author_Institution
Infineon Technol. AG, Neubiberg
Volume
8
Issue
3
fYear
2008
Firstpage
590
Lastpage
599
Abstract
In this paper, a novel mechanism is shown to cause the failure evolution in a metallization system under fast temperature cycle stress. The failure evolution is triggered by the lateral temperature distribution across the device, which causes an accumulating plastic deformation of the metallization. The root cause for the deformation emerges at the position of the maximum gradient in temperature.
Keywords
MOSFET; cracks; field effect transistor switches; plastic deformation; semiconductor device metallisation; semiconductor device testing; viscoplasticity; DMOS switch; DMOS transistor; cracking; double-diffused MOS; failure mechanism; fast thermal cycling; metallization; temperature gradient; thermomechanical stress; viscoplastic deformation; Interlayer dielectric (ILD) cracking; metallization failure; power cycling; short circuit; temperature cycling;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2008.2002359
Filename
4595637
Link To Document