Title :
Zero-bias modulation of tensile-strained InGaAs/InGaAsP quantum well lasers with wide phase margins
Author :
Nobuhara, H. ; Nakajima, Kensuke ; Tanaka, Kiyoshi ; Odagawa, T. ; Fujii, Teruya ; Wakao, K.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
1 Gbit/s, zero-bias modulation with wide phase margins was achieved over a 20-100 degrees C temperature range with a tensile-strained InGaAs/InGaAsP quantum well laser emitting at a wavelength of 1.5 mu m.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical modulation; semiconductor lasers; 1 Gbit/s; 1.5 micron; 20 to 100 degC; InGaAs-InGaAsP; temperature range; tensile strained quantum well laser; wide phase margins; zero-bias modulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930093
