Title :
Erbium-doped phosphosilicate glass waveguide amplifier fabricated by PECVD
Author :
Shuto, Kazuo ; Hattori, K. ; Kitagawa, Tomotaka ; Ohmori, Yutaka ; Horiguchi, M.
Author_Institution :
NTT Opto-Electron. Labs., Ibaraki, Japan
Abstract :
An Er-doped waveguide amplifier fabricated by plasma enhanced chemical vapour deposition is described. A maximum net gain of 5 dB and a gain coefficient of 0.67 dB/cm are obtained in a 0.48 wt.% Er-doped waveguide pumped at 420 mW at a wavelength of 0.98 mu m. The 0 dB gain threshold is 23 mW.
Keywords :
erbium; integrated optics; optical waveguides; phosphosilicate glasses; plasma CVD; solid lasers; 0.98 micron; 420 mW; 5 dB; Er-doped waveguide amplifier; P2O5-SiO2:Er; PSG:Er; gain coefficient; gain threshold; maximum net gain; phosphosilicate glass; plasma enhanced chemical vapour deposition;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930094
