• DocumentCode
    830532
  • Title

    High-power 1.02 mu m InGaAs/AlGaAs strained quantum well lasers with GaInP buried waveguides for pumping Pr3+-doped optical fibre amplifier

  • Author

    Fukagai, K. ; Ishikawa, Seiichiro ; Fujii, Hiromitsu ; Endo, Kazuhiro

  • Author_Institution
    NEC Corp., Ibaraki, Japan
  • Volume
    29
  • Issue
    2
  • fYear
    1993
  • Firstpage
    146
  • Lastpage
    147
  • Abstract
    High power 1.02 mu m single spatial mode laser diodes with low-loss (3.3 cm-1) GaInP buried waveguides have been developed for pumping Pr3+-doped optical fibre amplifiers. A maximum CW light output power of 415 mW and an optical fibre output of 71 mW at 200 mA have been achieved. A preliminary lifetest showed stable operation for over 2300 h under 100 mW CW conditions at 50 degrees C.
  • Keywords
    III-V semiconductors; aluminium compounds; fibre lasers; gallium arsenide; indium compounds; life testing; optical pumping; optical waveguides; praseodymium; semiconductor device testing; semiconductor lasers; 1.02 micron; 100 mW; 200 mA; 2300 h; 415 mW; 50 degC; 71 mW; CW light output power; GaInP buried waveguides; InGaAs-AlGaAs strained quantum well lasers; Pr 3+-doped optical fibre amplifiers; lifetest; optical fibre output; pumping; single spatial mode laser diodes; stable operation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930098
  • Filename
    184547
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=830532