• DocumentCode
    830670
  • Title

    Fabrication of GaAs quantum wire structure using metal organic molecular beam epitaxy

  • Author

    Nomura, Yutaka ; Morishita, Yu ; Goto, Satoshi ; Katayama, Yasunao

  • Author_Institution
    Optoelectron. Technol. Res. Lab., Ibaraki, Japan
  • Volume
    29
  • Issue
    2
  • fYear
    1993
  • Firstpage
    163
  • Lastpage
    165
  • Abstract
    GaAs quantum wires (100*20 nm2) buried in AlAs layers have been successfully fabricated using metal organic molecular beam epitaxy (MOMBE) for the first time. The underlying growth mechanism is that, under appropriate As4 pressure in MOMBE, GaAs preferentially grows only on the sidewalls of the patterned
  • Keywords
    III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium arsenide; semiconductor growth; semiconductor quantum wires; GaAs-AlAs; MOMBE; growth mechanism; metal organic molecular beam epitaxy; patterned GaAs substrate; preferential growth; quantum wire structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930110
  • Filename
    184559
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=830670