• DocumentCode
    830708
  • Title

    Microwave performance of 0.4 mu m gate metamorphic In0.29Al0.71As/In0.3Ga0.7As HEMT on GaAs substrate

  • Author

    Win, P. ; Druelle, Y. ; Legry, P. ; Lepilliet, Sylvie ; Cappy, A. ; Cordier, Yvon ; Favre, Julien

  • Volume
    29
  • Issue
    2
  • fYear
    1993
  • Firstpage
    169
  • Lastpage
    170
  • Abstract
    MBE grown metamorphic In0.29Al0.71As/In0.3Ga0.7As/GaAs high electron mobility transistors (HEMTs) have been successfully fabricated. A 0.4 mu m triangular gate device showed transconductance as high as 700 mS/mm at a current density of 230 mA/mm. The measured fT was 45 GHz and fmax was 115 GHz. These high values are, to the authors knowledge, the first reported for submicrometre metamorphic InAlAs/InGaAs/GaAs HEMTs with an indium content of 30%.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; solid-state microwave devices; 0.4 micron; 115 GHz; 45 GHz; 700 mS; GaAs substrate; HEMT; In 0.29Al 0.71As-In 0.3Ga 0.7As-GaAs; MBE grown; high electron mobility transistors; metamorphic device; triangular gate device;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930114
  • Filename
    184563
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=830708