Title :
High wallplug efficiency vertical-cavity surface-emitting lasers using lower barrier DBR mirrors
Author :
Peters, M.G. ; Peters, F.H. ; Young, D.B. ; Scott, J.W. ; Thibeault, Brian J. ; Coldren, Larry A.
Author_Institution :
California Univ., Santa Barbara, CA, USA
Abstract :
A lower energy barrier p-type Al0.67Ga0.33As-GaAs DBR mirror has been incorporated into a previously reported vertical-cavity surface-emitting laser structure. CW measurements at room temperature demonstrate lower threshold voltages of 1.86 V, and a record high power-conversion efficiency of 14.9% was achieved.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; integrated optics; laser cavity resonators; semiconductor lasers; 1.86 V; 14.9 percent; Al 0.67Ga 0.33As-GaAs; CW measurements; high wallplug efficiency; lower barrier DBR mirrors; p-type; power-conversion efficiency; semiconductor laser; threshold voltages; vertical-cavity surface-emitting lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930115
