• DocumentCode
    830721
  • Title

    High wallplug efficiency vertical-cavity surface-emitting lasers using lower barrier DBR mirrors

  • Author

    Peters, M.G. ; Peters, F.H. ; Young, D.B. ; Scott, J.W. ; Thibeault, Brian J. ; Coldren, Larry A.

  • Author_Institution
    California Univ., Santa Barbara, CA, USA
  • Volume
    29
  • Issue
    2
  • fYear
    1993
  • Firstpage
    170
  • Lastpage
    172
  • Abstract
    A lower energy barrier p-type Al0.67Ga0.33As-GaAs DBR mirror has been incorporated into a previously reported vertical-cavity surface-emitting laser structure. CW measurements at room temperature demonstrate lower threshold voltages of 1.86 V, and a record high power-conversion efficiency of 14.9% was achieved.
  • Keywords
    III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; integrated optics; laser cavity resonators; semiconductor lasers; 1.86 V; 14.9 percent; Al 0.67Ga 0.33As-GaAs; CW measurements; high wallplug efficiency; lower barrier DBR mirrors; p-type; power-conversion efficiency; semiconductor laser; threshold voltages; vertical-cavity surface-emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930115
  • Filename
    184564