• DocumentCode
    830740
  • Title

    650-nm vertical-cavity surface-emitting lasers: laser properties and reliability investigations

  • Author

    Knigge, A. ; Franke, R. ; Knigge, S. ; Sumpf, B. ; Vogel, K. ; Zorn, M. ; Weyers, M. ; Trankle, G.

  • Author_Institution
    Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany
  • Volume
    14
  • Issue
    10
  • fYear
    2002
  • Firstpage
    1385
  • Lastpage
    1387
  • Abstract
    650-nm AlGaInP-AlGaAs-based oxide-confined VCSELs are investigated in dependence on the current aperture size. VCSELs with small aperture (a=5 μm) have a maximum continuous-wave (CW) output power of about 1 mW at room temperature. They reach higher operating temperatures (Tmax=55/spl deg/C), have narrower beam profiles, less transverse modes, and a higher side mode suppression compared to large aperture VCSELs (a>13 μm). The latter devices emit a CW-output power P=3 mW at 20/spl deg/C. Reliability tests of 655-nm devices show at 20/spl deg/C an output power of P/spl ap/0.4 mW over more than 1000 h and at 40/spl deg/C P/spl ap/0.1 mW over 500 h.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser modes; laser reliability; laser transitions; quantum well lasers; surface emitting lasers; 0.1 mW; 0.4 mW; 1 mW; 1000 h; 13 micron; 20 degC; 3 mW; 40 degC; 5 micron; 500 h; 55 degC; 650 nm; 655 nm; AlGaInP-AlGaAs; AlGaInP-AlGaAs-based oxide-confined VCSEL; CW-output power; current aperture size; higher operating temperatures; higher side mode suppression; large aperture; less transverse modes; narrower beam profiles; reliability; room temperature; small aperture; vertical-cavity surface-emitting lasers; Apertures; Distributed Bragg reflectors; Epitaxial growth; Fiber lasers; Optical surface waves; Power generation; Surface emitting lasers; Temperature; Testing; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2002.802084
  • Filename
    1037525