DocumentCode :
830740
Title :
650-nm vertical-cavity surface-emitting lasers: laser properties and reliability investigations
Author :
Knigge, A. ; Franke, R. ; Knigge, S. ; Sumpf, B. ; Vogel, K. ; Zorn, M. ; Weyers, M. ; Trankle, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany
Volume :
14
Issue :
10
fYear :
2002
Firstpage :
1385
Lastpage :
1387
Abstract :
650-nm AlGaInP-AlGaAs-based oxide-confined VCSELs are investigated in dependence on the current aperture size. VCSELs with small aperture (a=5 μm) have a maximum continuous-wave (CW) output power of about 1 mW at room temperature. They reach higher operating temperatures (Tmax=55/spl deg/C), have narrower beam profiles, less transverse modes, and a higher side mode suppression compared to large aperture VCSELs (a>13 μm). The latter devices emit a CW-output power P=3 mW at 20/spl deg/C. Reliability tests of 655-nm devices show at 20/spl deg/C an output power of P/spl ap/0.4 mW over more than 1000 h and at 40/spl deg/C P/spl ap/0.1 mW over 500 h.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser modes; laser reliability; laser transitions; quantum well lasers; surface emitting lasers; 0.1 mW; 0.4 mW; 1 mW; 1000 h; 13 micron; 20 degC; 3 mW; 40 degC; 5 micron; 500 h; 55 degC; 650 nm; 655 nm; AlGaInP-AlGaAs; AlGaInP-AlGaAs-based oxide-confined VCSEL; CW-output power; current aperture size; higher operating temperatures; higher side mode suppression; large aperture; less transverse modes; narrower beam profiles; reliability; room temperature; small aperture; vertical-cavity surface-emitting lasers; Apertures; Distributed Bragg reflectors; Epitaxial growth; Fiber lasers; Optical surface waves; Power generation; Surface emitting lasers; Temperature; Testing; Vertical cavity surface emitting lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2002.802084
Filename :
1037525
Link To Document :
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