DocumentCode :
830820
Title :
Effect of pump laser noise on an erbium-doped fiber-amplified signal
Author :
Giudice, G.E. ; Guy, S.C. ; Crigler, S.G. ; Zenteno, L.A. ; Hallock, B.S.
Author_Institution :
Corning Inc., NY, USA
Volume :
14
Issue :
10
fYear :
2002
Firstpage :
1403
Lastpage :
1405
Abstract :
The effect of pump laser noise on erbium-doped fiber-amplifier (EDFA) output was investigated using an optically pumped semiconductor laser (OPSL) as a high-power pump. Measurements included pump and amplified signal relative intensity noise (RIN) in frequency and time domains as well as gain spectral measurements and 10-Gb/s Q-factor tests, all under several levels of backreflection to the pump laser. Time-domain low-frequency noise (<50 kHz) was observed to increase with increasing backreflection. With 150-mW OPSL output power and -28 dB backreflection, temporal RIN was /spl sim/3.4% for the pump and /spl sim/2.2% for the amplified signal. At a maximum pump power of 450 mW, RIN was 1.4% and 1.1%, respectively. The measured Q-factor of 12.5 dB at 10 Gb/s showed less than 0.5-dB penalty compared to a back-to-back system measurement of 13 dB. Power budget and operating specifications of an OPSL-pumped multicoil EDFA were also evaluated.
Keywords :
Q-factor; erbium; laser noise; light reflection; optical fibre amplifiers; optical pumping; semiconductor lasers; superradiance; 10 Gbit/s; 450 mW; 50 kHz; EDFA; Er-doped fiber-amplifier; OPSL-pumped multicoil EDFA; Q-factor tests; amplified signal relative intensity noise; back-to-back system measurement; backreflection; erbium-doped fiber-amplified signal; frequency domains; gain spectral measurements; high-power pump; maximum pump power; operating specifications; optically pumped semiconductor laser; output power; power budget; pump laser noise; temporal RIN; time domains; time-domain low-frequency noise; Erbium-doped fiber amplifier; Erbium-doped fiber lasers; Frequency measurement; Gain measurement; Laser excitation; Laser noise; Optical noise; Pump lasers; Semiconductor device noise; Semiconductor lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2002.802379
Filename :
1037531
Link To Document :
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