DocumentCode
830846
Title
A Scalable Digitalized Buffer for Gigabit I/O
Author
Lu, Hungwen ; Su, Chauchin ; Liu, Chien-Nan
Author_Institution
Electr. Eng. Dept., Nat. Central Univ., Jungli
Volume
55
Issue
10
fYear
2008
Firstpage
1026
Lastpage
1030
Abstract
A serial input-output (I/O) composed of inverters and transmission gates only is proposed to achieve high supply voltage scalability and low area overhead. The inverter with an inductive biasing circuit can extend bandwidth, and reduce the simultaneous switching noise simultaneously. With a TSMC 0.18-mum CMOS process, the I/O occupies an area of 0.014 mm2 and operates from 4 Gbps@1.9 V to 1.5 Gbps@1.1 V.
Keywords
CMOS integrated circuits; buffer circuits; driver circuits; TSMC CMOS process; high-supply voltage scalability; inductive biasing circuit; inverters; scalable digitalized buffer; serial gigabit input-output; simultaneous switching noise; size 0.18 mum; transmission gates; voltage 1.9 V to 1.1 V; Buffer; input–output (I/O); simultaneous switching noise (SSN);
fLanguage
English
Journal_Title
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher
ieee
ISSN
1549-7747
Type
jour
DOI
10.1109/TCSII.2008.925661
Filename
4595702
Link To Document