Title :
Submicrometre silicon permeable base transistors with buried CoSi2 gates
Author :
Schuppen, A. ; Vescan, L. ; Marso, M. ; Hart, A.v.d. ; Luth, H. ; Beneking, H.
Author_Institution :
Inst. fur Schicht und Ionentechnik, Forschungszentrum Julich, Germany
Abstract :
Silicon permeable base transistors (PBTs) with monocrystalline buried CoSi2 gates have been fabricated by local high dose cobalt ion implantation through a grid-like mask into epitaxial Si
Keywords :
Schottky gate field effect transistors; cobalt compounds; elemental semiconductors; ion implantation; semiconductor device models; semiconductor epitaxial layers; semiconductor growth; silicon; vapour phase epitaxial growth; DC characteristics; Si-CoSi 2; grating periodicity; grid-like mask; ion implantation; low-pressure vapour phase epitaxy; maximum transconductance; negative gate voltages; permeable base transistors; pinchoff; transit frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930146
