DocumentCode
831108
Title
Improved signal-to-noise ratio in gain-levered InGaAs/InP MQW lasers
Author
Westbrook, L.D.
Volume
29
Issue
2
fYear
1993
Firstpage
230
Lastpage
231
Abstract
The gain-lever effect is demonstrated in long wavelength InGaAs/InP quantum well lasers for the first time. Preliminary measurements show an improvement in amplitude modulation efficiency of 10 dB at 900 MHz. Relative intensity noise increases by just 2.5 dB yielding a signal-to-noise ratio improvement of 7.5 dB.
Keywords
III-V semiconductors; amplitude modulation; gallium arsenide; indium compounds; optical modulation; semiconductor device noise; semiconductor lasers; 900 MHz; InGaAs-InP; MQW lasers; amplitude modulation efficiency; gain-lever effect; relative intensity noise; signal-to-noise ratio;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930158
Filename
184603
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