Title :
Reliable high-power, singlemode, 630-640 nm Ga0.5In0.5P/GaAlInP ridge waveguide laser diodes
Author :
Ou, S.S. ; Jansen, Maarten ; Yang, Jie J. ; Fu, R.J. ; Hwang, C.J.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
Single-longitudinal and stable fundamental-mode operation to CW output powers of 40 mW, and maximum CW output powers of 46 mW at a wavelength of 636 nm were achieved for 10 mu m-wide, 1200 mu m-long GaInP/GaAlInP ridge waveguide laser diodes at room temperature. Ongoing lifetests indicate stable 5 and 20 mW operation of more than 2000 and 1200 h at room temperature with extrapolated lifetimes >10000 and 6000 h, respectively.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; gradient index optics; indium compounds; laser modes; semiconductor lasers; 1200 h; 20 mW; 2000 h; 40 mW; 46 mW; 5 mW; 630 to 640 nm; CW output powers; GRINSCH structure; Ga 0.5In 0.5P-GaAlInP; lifetests; lifetimes; reliability; ridge waveguide laser diodes; room temperature; single longitudinal mode operation; stable fundamental-mode operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930160
