Abstract :
In a visible-light laser using In0.5(Ga1-xAl x)0.5P (0⩽x⩽1), the conduction-band discontinuity at the interface between the active layer and clad layer is not large enough to strongly suppress carriers overflowing into the clad layer, unlike in the GaAlAs system. A multiquantum barrier (MQB) is used to overcome this problem, and the electron-reflecting powers are calculated to determine the characteristics of this suppression. Electron-reflecting powers are calculated for a high-power, high-temperature laser with an In0.5 Ga0.5P active layer, an In0.5Ga0.15 clad layer, and a set of superposed MQBs, and for a short-wavelength (λ:586-nm) laser composed of an In0.5Ga0.33Al0.17P active layer, an In 0.5Ga0.15Al0.35P clad layer, and a set of superposed MQBs
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor lasers; 586 nm; III-V semiconductors; In0.5(Ga1-xAlx)0.5P; In0.5Ga0.15 clad layer; In0.5Ga0.15Al0.35P clad layer; In0.5Ga0.33Al0.17P; In0.5Ga0.5P active layer; InGaAlP heterojunctions; carriers; clad layer; conduction-band discontinuity; electron-reflecting powers; interface; short wavelength laser; superposed multiquantum barriers; visible-light laser; Carrier confinement; Conducting materials; Diode lasers; Electrons; Heterojunctions; Laser modes; Laser transitions; Optical materials; Semiconductor lasers; Tunneling;
