High speed quantum-well lasers and carrier transport effects

Author

Nagarajan, Radhakrishnan ; Ishikawa, Masayuki ; Fukushima, Toru ; Geels, Randall S. ; Bowers, John E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

28

Issue

10

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

1990

Lastpage

2008

Abstract

Carrier transport can significantly affect the high-speed properties of quantum-well lasers. The authors have developed a model and derived analytical expressions for the modulation response, resonance frequency, damping rate, and K factor to include these effects. They show theoretically and experimentally that carrier transport can lead to significant low-frequency parasitic-like rolloff that reduces the modulation response by as much as a factor of six in quantum-well lasers. They also show that, in addition, it leads to a reduction in the effective differential gain and thus the resonance frequency, while the nonlinear gain compression factor remains largely unaffected by it. The authors present the temperature dependence data for the K factor as further evidence for the effects of carrier transport

Keywords

semiconductor lasers; semiconductor quantum wells; K factor; analytical expressions; carrier transport effects; damping rate; effective differential gain; high-speed properties; low-frequency parasitic-like rolloff; model; modulation response; nonlinear gain compression factor; quantum-well lasers; resonance frequency; temperature dependence data; Bandwidth; Charge carrier density; Damping; Differential equations; Laser modes; Laser noise; Quantum well lasers; Resonance; Resonant frequency; Semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.159508

Filename

159508