Title :
Influence of rapid thermal nitridation process in N2O ambient on the endurance performance of FLOTOX EEPROM cells
Author :
Papadas, C. ; Ghibaudo, Gerard ; Pio, F. ; Riva, C. ; Mortini, P. ; Pananakakis, G.
Author_Institution :
SGS Thomson Microelectronics, Grenoble, France
Abstract :
A comparison between the endurance characteristics obtained on FLOTOX EEPROM cells with pure SiO2 as the tunnel insulator and rapid thermal processed nitrided oxides in N2O ambient is presented. The superiority of nitrided oxides for applications in future floating gate devices is demonstrated and the obtained higher reliability performance is attributed quantitatively to nitrogen incorporation in the tunnel insulator layer.
Keywords :
EPROM; circuit reliability; integrated circuit technology; integrated memory circuits; nitridation; rapid thermal processing; FLOTOX EEPROM cells; N 2O ambient; SiO 2; SiO xN y; endurance performance; floating gate devices; rapid thermal nitridation; rapid thermal processed nitrided oxides; reliability; tunnel insulator layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930166
