• DocumentCode
    831220
  • Title

    Improved negative dynamic resistance model for high voltage MOSFETs

  • Author

    Van Calster, A. ; Witters, J.

  • Volume
    29
  • Issue
    2
  • fYear
    1993
  • Firstpage
    212
  • Lastpage
    213
  • Abstract
    For MOSFETs operating at moderate and higher power levels a negative dynamic resistance is observed. An electrothermal model based on the temperature dependence of the mobility and the velocity saturation is proposed.
  • Keywords
    insulated gate field effect transistors; negative resistance; power transistors; semiconductor device models; MOSFETs; electrothermal model; negative dynamic resistance model; power levels; temperature dependence; velocity saturation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930142
  • Filename
    184617
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=831220