• DocumentCode
    831272
  • Title

    Investigation of Bulk Electron Traps Created by Fast Neutron Irradiation in a Buried N-Channel CCD

  • Author

    Saks, N.S.

  • Author_Institution
    Naval Research Laboratory Washington, D. C. 20375
  • Volume
    24
  • Issue
    6
  • fYear
    1977
  • Firstpage
    2153
  • Lastpage
    2157
  • Abstract
    Electron traps created by high energy (~15 MeV) neutron irradiation at 300°K have been characterized by the double pulse technique in an n-buried-channel CCD. Measurements have been made of electron emission from the traps as a function of time from 77°K to 300°K. Three distinct trap levels are observed at (Ec-Et) equals 0.14, 0.23, and 0.41 eV. Electron emission from the traps as a function of time does not follow the expected exponential time behavior. Analysis of the dispersion in the time vs. emission curves leads to apparent widths of 0.08 and 0.10 eV of the energy levels at Ec - 0.14 and Ec - 0.41 eV, respectively. Introduction rates of the levels and possible physical defects which create the levels are also discussed.
  • Keywords
    Charge coupled devices; Delay effects; Electron emission; Electron traps; Gold; Laboratories; Neutrons; Pulse amplifiers; Shift registers; Silicon;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1977.4329182
  • Filename
    4329182