High-power ultrafast laser diodes

Author

Delfyett, Peter J. ; Florez, Leigh Thirion ; Stoffel, N. ; Gmitter, T. ; Andreadakis, Nicholas C. ; Silberberg, Yaron ; Heritage, Jonathan P. ; Alphonse, Gerard A.

Author_Institution

Bellcore, Red Bank, NJ, USA

Volume

28

Issue

10

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

2203

Lastpage

2219

Abstract

Several ultrafast optical pulse generation techniques utilizing external cavity semiconductor lasers are described. These techniques include active mode locking, passive mode locking, hybrid mode locking, and several chirp compensation techniques. Utilizing these techniques, optical pulses of 200 fs in duration with over 160 W of peak power have been generated, making these pulses both the shortest and most intense ever generated with a semiconductor injection diode laser system. These pulses have been used to study the ultrafast amplification characteristics of semiconductor lasers. The results presented reveal the nature of the effects which dominate the pulse shaping mechanisms in external cavity hybrid mode-locked diode lasers

Keywords

high-speed optical techniques; laser mode locking; semiconductor lasers; 160 W; 200 fs; active mode locking; chirp compensation techniques; external cavity semiconductor lasers; high power lasers; hybrid mode locking; laser cavity resonators; laser mode locking; passive mode locking; peak power; pulse shaping; semiconductor injection diode laser system; ultrafast amplification characteristics; ultrafast laser diodes; ultrafast optical pulse generation techniques; Diode lasers; Laser mode locking; Nonlinear optics; Optical pulse generation; Optical pulse shaping; Optical pulses; Power generation; Pulse amplifiers; Semiconductor lasers; Ultrafast optics;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.159528

Filename

159528