Long wavelength high-speed semiconductor lasers with carrier transport effects

Author

Ishikawa, Masayuki ; Nagarajan, Radhakrishnan ; Fukushima, Toru ; Wasserbauer, John G. ; Bowers, John E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

28

Issue

10

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

2230

Lastpage

2241

Abstract

Carrier transport has a significant effect on the high-speed characteristics of semiconductor lasers. The authors show theoretically and experimentally that the low frequency rolloff and excess increase of damping due to carrier transport significantly limits the high-speed modulation bandwidth of long wavelength InGaAs(P)-InP quantum-well lasers. The inherent small conduction band offset and small hole diffusion constant of this material are responsible for the severe carrier transport effects. The authors also discuss the optimum design for the high speed modulation of the long wavelength lasers and the advantages of the InGaAlAs-InP material system

Keywords

carrier mobility; laser theory; optical modulation; semiconductor lasers; InGaAlAs-InP material system; InGaAs-InP; InGaAsP-InP; carrier transport effects; excess damping increase; high speed modulation; high-speed modulation bandwidth; high-speed semiconductor lasers; inherent small conduction band offset; long wavelength lasers; low frequency rolloff; optimum design; quantum-well lasers; small hole diffusion constant; Bandwidth; Conducting materials; Damping; Frequency; Laser theory; Optical design; Optical materials; Quantum well lasers; Semiconductor lasers; Semiconductor materials;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.159530

Filename

159530